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FID60-06D

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City:hong kong
Country/Region:china
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FID60-06D

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Gate-Emitter Leakage Current :200 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :65 A
Pd - Power Dissipation :200 W
Collector- Emitter Voltage VCEO Max :600 V
Package / Case :ISOPLUS i4-PAC-5
Maximum Operating Temperature :+ 150 C
Maximum Gate Emitter Voltage :+/- 20 V
Packaging :Tube
Configuration :Single
Collector-Emitter Saturation Voltage :1.6 V
Manufacturer :IXYS
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The FID60-06D,from IXYS,is IGBT Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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