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QPD1015L

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Country/Region:china
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QPD1015L

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Transistor Polarity :N-Channel
Technology :GaN SiC
Product Category :RF JFET Transistors
Mounting Style :Screw
Gain :20 dB
Transistor Type :HEMT
Output Power :70 W
Package / Case :NI-360
Maximum Operating Temperature :+ 85 C
Vds - Drain-Source Breakdown Voltage :50 V
Packaging :Tray
Id - Continuous Drain Current :2.5 A
Vgs - Gate-Source Breakdown Voltage :145 V
Pd - Power Dissipation :64 W
Manufacturer :Qorvo
Description :RF JFET Transistors DC-3.7GHz 65W 50V SSG 20dB GaN
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The QPD1015L,from Qorvo,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online chat” or send a quote to us!
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