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Product Category :MOSFET
Vgs (Max) :±30V
Current - Continuous Drain (Id) @ 25°C :10A (Ta)
FET Type :N-Channel
Mounting Type :Through Hole
Gate Charge (Qg) (Max) @ Vgs :25nC @ 10V
Manufacturer :Toshiba
Minimum Quantity :2500
Drive Voltage (Max Rds On, Min Rds On) :10V
Operating Temperature :150°C (TJ)
FET Feature :-
Series :π-MOSVII
Input Capacitance (Ciss) (Max) @ Vds :1350pF @ 25V
Supplier Device Package :TO-220SIS
Part Status :Active
Packaging :Tube
Rds On (Max) @ Id, Vgs :750 mOhm @ 5A, 10V
Power Dissipation (Max) :45W (Tc)
Package / Case :TO-220-3 Full Pack
Technology :MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id :4V @ 1mA
Drain to Source Voltage (Vdss) :600V
Description :MOSFET N-CH 600V 10A TO220SIS
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