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SI7818DN-T1-E3

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City:hong kong
Country/Region:china
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SI7818DN-T1-E3

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs :30 nC @ 10 V
FET Feature :-
Product Status :Active
Mounting Type :Surface Mount
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series :TrenchFET®
Vgs (Max) :±20V
Vgs(th) (Max) @ Id :4V @ 250µA
Supplier Device Package :PowerPAK® 1212-8
Rds On (Max) @ Id, Vgs :135mOhm @ 3.4A, 10V
Mfr :Vishay Siliconix
Operating Temperature :-55°C ~ 150°C (TJ)
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :6V, 10V
Power Dissipation (Max) :1.5W (Ta)
Package / Case :PowerPAK® 1212-8
Drain to Source Voltage (Vdss) :150 V
Current - Continuous Drain (Id) @ 25°C :2.2A (Ta)
Technology :MOSFET (Metal Oxide)
Base Product Number :SI7818
Description :MOSFET N-CH 150V 2.2A PPAK1212-8
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N-Channel 150 V 2.2A (Ta) 1.5W (Ta) Surface Mount PowerPAK® 1212-8
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