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SI4497DY-T1-GE3

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Country/Region:china
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SI4497DY-T1-GE3

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.5V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :8-SOIC (0.154", 3.90mm Width)
Gate Charge (Qg) (Max) @ Vgs :285 nC @ 10 V
Rds On (Max) @ Id, Vgs :3.3mOhm @ 20A, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :30 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :9685 pF @ 15 V
Mounting Type :Surface Mount
Series :TrenchFET®
Supplier Device Package :8-SOIC
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :36A (Tc)
Power Dissipation (Max) :3.5W (Ta), 7.8W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :SI4497
Description :MOSFET P-CH 30V 36A 8SO
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P-Channel 30 V 36A (Tc) 3.5W (Ta), 7.8W (Tc) Surface Mount 8-SOIC
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