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IRF830APBF

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IRF830APBF

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :4.5V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-220-3
Gate Charge (Qg) (Max) @ Vgs :24 nC @ 10 V
Rds On (Max) @ Id, Vgs :1.4Ohm @ 3A, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :10V
Package :Tube
Drain to Source Voltage (Vdss) :500 V
Vgs (Max) :±30V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :620 pF @ 25 V
Mounting Type :Through Hole
Series :-
Supplier Device Package :TO-220AB
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :5A (Tc)
Power Dissipation (Max) :74W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :IRF830
Description :MOSFET N-CH 500V 5A TO220AB
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N-Channel 500 V 5A (Tc) 74W (Tc) Through Hole TO-220AB
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