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FQT7N10LTF

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FQT7N10LTF

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2V @ 250µA
Operating Temperature :-55°C ~ 150°C (TJ)
Package / Case :TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs :6 nC @ 5 V
Rds On (Max) @ Id, Vgs :350mOhm @ 850mA, 10V
FET Type :N-Channel
Drive Voltage (Max Rds On, Min Rds On) :5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :100 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :290 pF @ 25 V
Mounting Type :Surface Mount
Series :QFET®
Supplier Device Package :SOT-223-4
Mfr :onsemi
Current - Continuous Drain (Id) @ 25°C :1.7A (Tc)
Power Dissipation (Max) :2W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :FQT7N10
Description :MOSFET N-CH 100V 1.7A SOT223-4
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N-Channel 100 V 1.7A (Tc) 2W (Tc) Surface Mount SOT-223-4
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