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SQ2389ES-T1_GE3

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SQ2389ES-T1_GE3

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.5V @ 250µA
Operating Temperature :-55°C ~ 175°C (TJ)
Package / Case :TO-236-3, SC-59, SOT-23-3
Gate Charge (Qg) (Max) @ Vgs :12 nC @ 10 V
Rds On (Max) @ Id, Vgs :94mOhm @ 10A, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :40 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :420 pF @ 20 V
Mounting Type :Surface Mount
Series :Automotive, AEC-Q101, TrenchFET®
Supplier Device Package :SOT-23-3 (TO-236)
Mfr :Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C :4.1A (Tc)
Power Dissipation (Max) :3W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :SQ2389
Description :MOSFET P-CH 40V 4.1A SOT23-3
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P-Channel 40 V 4.1A (Tc) 3W (Tc) Surface Mount SOT-23-3 (TO-236)
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