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NP100P06PDG-E1-AY

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City:hong kong
Country/Region:china
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NP100P06PDG-E1-AY

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Category :Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature :-
Vgs(th) (Max) @ Id :2.5V @ 1mA
Operating Temperature :175°C (TJ)
Package / Case :TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs :300 nC @ 10 V
Rds On (Max) @ Id, Vgs :6mOhm @ 50A, 10V
FET Type :P-Channel
Drive Voltage (Max Rds On, Min Rds On) :4.5V, 10V
Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Drain to Source Voltage (Vdss) :60 V
Vgs (Max) :±20V
Product Status :Active
Input Capacitance (Ciss) (Max) @ Vds :15000 pF @ 10 V
Mounting Type :Surface Mount
Series :-
Supplier Device Package :TO-263
Mfr :Renesas Electronics America Inc
Current - Continuous Drain (Id) @ 25°C :100A (Tc)
Power Dissipation (Max) :1.8W (Ta), 200W (Tc)
Technology :MOSFET (Metal Oxide)
Base Product Number :NP100P06
Description :MOSFET P-CH 60V 100A TO263
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P-Channel 60 V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
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